Innoscience (Zhuhai) Technology Co., Ltd. was founded in December 2015. The first phase is located in Zhuhai National Hi-Tech District and has established China’s first mass production line of 8-inch GaN-on-Si Power Device. Innoscience provides a wide range of solutions including 30V-650V GaN-on-Si power devices and 5G RF devices. The product design and performance have reached international advanced level. Innoscience is committed to building a world-class brand and contribute to the growth of China’s semiconductor industry.
Innoscience adopts IDM (Integrated Device Manufacturer) full industry chain mode. With its strong technical strength, Innoscience (Zhuhai) Technology Co., Ltd. is committed to building the third generation semiconductor production platform integrating R&D, design, EPI growth, Fab processing and testing. Innoscience’s IDM model with worldwide first commercialized 8-inch GaN-on-Si power device mass production line performed our products competitive by high-performance, low-cost, and high-reliability compared to others.
Zhuhai government encourages Innoscience to return to China and start up business
Innoscience (Zhuhai) Technology Co., Ltd. was formally established.
The groundbreaking ceremony for Innoscience's R&D and production.
All process tools including MOCVD are set up and ready for production.
The opening ceremony of the "8-inch GaN-on-Si Production Line".
Innoscience was ranked as one of the "Top 10 Events in Chinese Semiconductor Industry in 2017" by China Electronics News.
Mr. Ding Wenwu, the president of National IC Industry Investment Fund visited Innoscience.
Release of world's first 8'' GaN-on-Si WLCSP power products.
The groundbreaking ceremony of Suzhou semiconductor Fab.
Mr. Ge Changwei, the Director of National Development and Reform Commission of Guangdong Province, visited Innoscience.
Innoscience won the First Prize of National Innovation and Entrepreneurship.