Innoscience has a world-leading 8-inch GaN-on-Si industrialization platform, which provides proven capabilities of GaN epitaxial growth, gold-free and CMOS compatible process, as well as reliability testing and failure analysis.
Innoscience has also established strategic partnerships with top universities, research institutions and enterprises.
The company built the first world-class 8-inch wafer FAB in China with gold-free and CMOS compatible process, including photolithography, thin-film growth, etching, diffusion, testing and other areas.
Innoscience owns several world-leading MOCVD equipment for the industrialization of 8-inch GaN-on-Si epitaxy. Through its own patented technology, Innoscience has solved the problems in the 8-inch GaN-on-Si epitaxial growth, including lattice mismatch, thickness uniformity, and thick film growth applied in 650V products.
Innoscience owns the industry-leading reliability testing and failure analysis laboratories.
● Reliability Testing Laboratory: It has wafer-level, packaging-level and system-level testing capabilities. Testing equipment includes Keysight, probe station, HAST, TC, HTGB, HTRB, THB, etc.
● Failure Analysis Laboratory: It has electrical, chemical and physical analysis capabilities. Analytical equipment includes
EMMI/OBIRCH, FIB, high-precision SEM, AFM, grinding machine, etc.
Innoscience has established strategic partnerships with research institutions and universities at home and abroad such as Interuniversity Microelectronics Center (IMEC), Hong Kong University of Science and Technology, and University of Electronic Science and Technology to cooperate in the fields of GaN epitaxial growth, manufacture, reliability, and GaN devices as well as integrated circuit.
For GaN power and RF (radio frequency) devices, Innoscience and JCET has jointly developed in the fields of wafer-level packaging, QFN plastic packaging, and chips testing. JCET is the largest packaging and testing enterprise in China.